Analysis for positions of Sn atoms in epitaxial Ge_1―xSn_x film in low temperature depositionsKAMIYAMA, Eiji; SUEOKA, Koji; NAKATSUKA, Osamu et al.Thin solid films. 2014, Vol 557, pp 173-176, issn 0040-6090, 4 p.Conference Paper

Heteroepitaxial growth of Ge on compliant strained nano-structured Si lines and dots on (001) silicon on insulator substrateZAUMSEIL, Peter; YAMAMOTO, Yuji; SCHUBERT, Markus Andreas et al.Thin solid films. 2014, Vol 557, pp 50-54, issn 0040-6090, 5 p.Conference Paper

Highly n-doped, tensile-strained Ge grown on Si by molecular beam epitaxyNISHIDA, Keisuke; XUEJUN XU; SAWANO, Kentarou et al.Thin solid films. 2014, Vol 557, pp 66-69, issn 0040-6090, 4 p.Conference Paper

Impacts of AlGeO formation by post thermal oxidation of Al₂O₃/Ge structure on interfacial propertiesSHIBAYAMA, Shigehisa; KATO, Kimihiko; SAKASHITA, Mitsuo et al.Thin solid films. 2014, Vol 557, pp 282-287, issn 0040-6090, 6 p.Conference Paper

In-depth analysis of high-quality Ge-on-insulator structure formed by rapid-melting growthCHIKITA, H; MATSUMURA, R; TOJO, Y et al.Thin solid films. 2014, Vol 557, pp 139-142, issn 0040-6090, 4 p.Conference Paper

Influence of Ge substrate orientation on crystalline structures of Ge_1―xSn_x epitaxial layersASANO, Takanori; KIDOWAKI, Shohei; KUROSAWA, Masashi et al.Thin solid films. 2014, Vol 557, pp 159-163, issn 0040-6090, 5 p.Conference Paper

Large-grained (111)-oriented Si/Al/SiO₂ structures formed by diffusion-controlled Al-induced layer exchangeNUMATA, Ryohei; TOKO, Kaoru; USAMI, Noritaka et al.Thin solid films. 2014, Vol 557, pp 147-150, issn 0040-6090, 4 p.Conference Paper

Phosphorus atomic layer doping in SiGe using reduced pressure chemical vapor depositionYAMAMOTO, Yuji; HEINEMANN, Bernd; MUROTA, Junichi et al.Thin solid films. 2014, Vol 557, pp 14-18, issn 0040-6090, 5 p.Conference Paper

Potential profile and photovoltaic effect in nanoscale lateral pn junction observed by Kelvin probe force microscopyNOWAK, Roland; MORARU, Daniel; MIZUNO, Takeshi et al.Thin solid films. 2014, Vol 557, pp 249-253, issn 0040-6090, 5 p.Conference Paper

Schottky barrier height systematics studied by partisan interlayerWEI LONG; YANG LI; TUNG, Raymond T et al.Thin solid films. 2014, Vol 557, pp 254-257, issn 0040-6090, 4 p.Conference Paper

Ultra high hole mobilities in a pure strained Ge quantum wellMIRONOV, O. A; HASSAN, A. H. A; BERKUTOV, I. B et al.Thin solid films. 2014, Vol 557, pp 329-333, issn 0040-6090, 5 p.Conference Paper

Dynamic analysis of rapid-melting growth using SiGe on insulatorMATSUMURA, Ryo; TOJO, Yuki; KUROSAWA, Masashi et al.Thin solid films. 2014, Vol 557, pp 125-128, issn 0040-6090, 4 p.Conference Paper

Epitaxial formation and electrical properties of Ni germanide/Ge(110) contactsYUNSHENG DENG; NAKATSUKA, Osamu; JUN YOKOI et al.Thin solid films. 2014, Vol 557, pp 84-89, issn 0040-6090, 6 p.Conference Paper

Formation of Ge(111) on Insulator by Ge epitaxy on Si(111) and layer transferSAWANO, K; HOSHI, Y; SHIRAKI, Y et al.Thin solid films. 2014, Vol 557, pp 76-79, issn 0040-6090, 4 p.Conference Paper

HfO₂-assisted SiO₂ reduction in HfO₂/SiO₂/Si stacksXIUYAN LI; YAJIMA, Takeaki; NISHIMURA, Tomonori et al.Thin solid films. 2014, Vol 557, pp 272-275, issn 0040-6090, 4 p.Conference Paper

Impacts of oxygen passivation on poly-crystalline germanium thin film transistorKABUYANAGI, Shoichi; NISHIMURA, Tomonori; NAGASHIO, Kosuke et al.Thin solid films. 2014, Vol 557, pp 334-337, issn 0040-6090, 4 p.Conference Paper

Low-temperature fabrication of Y₂O₃/Ge gate stacks with ultrathin GeO_x interlayer and low interface states density characterized by a reliable deep-level transient spectroscopy methodDONG WANG; NAGATOMI, Yuta; KOJIMA, Shuta et al.Thin solid films. 2014, Vol 557, pp 288-291, issn 0040-6090, 4 p.Conference Paper

Nano-scale surface morphology optimization of the ohmic contacts and electrical properties of AlGaN/GaN high electron mobility transistors using a rapid thermal annealing dielectric protection layerCHO, Sung-Jin; CONG WANG; KIM, Nam-Young et al.Thin solid films. 2014, Vol 557, pp 262-267, issn 0040-6090, 6 p.Conference Paper

Nitrogen doping effect upon hole tunneling characteristics of Si barriers in Si_1-xGe_x/Si resonant tunneling diodeKAWASHIMA, Tomoyuki; SAKURABA, Masao; MUROTA, Junichi et al.Thin solid films. 2014, Vol 557, pp 302-306, issn 0040-6090, 5 p.Conference Paper

Radiation tolerance of Si_1―yC_y source/drain n-type metal oxide semiconductor field effect transistors with different carbon concentrationsNAKASHIMA, Toshiyuki; ASAI, Yuki; HORI, Masato et al.Thin solid films. 2014, Vol 557, pp 307-310, issn 0040-6090, 4 p.Conference Paper

Selective epitaxial growth of compressively strained Ge layers on Si in 40-nm trench arraysBYONGJU KIM; KIM, Sun-Wook; HYUNCHUL JANG et al.Thin solid films. 2014, Vol 557, pp 55-60, issn 0040-6090, 6 p.Conference Paper

Tunnel field-effect transistors with germanium/strained-silicon hetero-junctions for low power applicationsMINSOO KIM; YOUNGHYUN KIM; YOKOYAMA, Masafumi et al.Thin solid films. 2014, Vol 557, pp 298-301, issn 0040-6090, 4 p.Conference Paper

A magnetic tunnel junction with an L2₁-ordered Co₂FeSi electrode formed by all room-temperature fabrication processesFUJITA, Yuichi; YAMADA, Shinya; MAEDA, Yuya et al.Thin solid films. 2014, Vol 557, pp 386-389, issn 0040-6090, 4 p.Conference Paper

Characterization of crystalline structures of SiGe substrate formed by traveling liquidus-zone method for devices with Ge/SiGe structuresYAMAHA, Takashi; NAKATSUKA, Osamu; TAOKA, Noriyuki et al.Thin solid films. 2014, Vol 557, pp 129-134, issn 0040-6090, 6 p.Conference Paper

Dislocation behavior of surface-oxygen-concentration controlled Si wafersASAZU, Hirotada; TAKEUCHI, Shotaro; SANNAI, Hiroya et al.Thin solid films. 2014, Vol 557, pp 106-109, issn 0040-6090, 4 p.Conference Paper